Invention Grant
US07964107B2 Methods using block copolymer self-assembly for sub-lithographic patterning
有权
用于亚光刻图案的嵌段共聚物自组装方法
- Patent Title: Methods using block copolymer self-assembly for sub-lithographic patterning
- Patent Title (中): 用于亚光刻图案的嵌段共聚物自组装方法
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Application No.: US11703911Application Date: 2007-02-08
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Publication No.: US07964107B2Publication Date: 2011-06-21
- Inventor: Dan B. Millward
- Applicant: Dan B. Millward
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B81C1/00
Abstract:
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.
Public/Granted literature
- US20080193658A1 Methods using block copolymer self-assembly for sub-lithographic patterning Public/Granted day:2008-08-14
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