Invention Grant
- Patent Title: Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
- Patent Title (中): 半导体发光器件及其制造方法，半导体器件及其制造方法
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Application No.: US11969088Application Date: 2008-01-03
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Publication No.: US07964419B2Publication Date: 2011-06-21
- Inventor: Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
- Applicant: Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JPP2000-401998 20001228; JPP2001-271947 20010907
- Main IPC: H01L21/36
- IPC: H01L21/36
Abstract:
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
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