Invention Grant
- Patent Title: Method for manufacturing photoelectric conversion device
- Patent Title (中): 制造光电转换装置的方法
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Application No.: US12260302Application Date: 2008-10-29
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Publication No.: US07964429B2Publication Date: 2011-06-21
- Inventor: Shunpei Yamazaki , Yasuyuki Arai
- Applicant: Shunpei Yamazaki , Yasuyuki Arai
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-285252 20071101; JP2007-285253 20071101
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A photoelectric conversion device which is excellent in photoelectric conversion characteristics is provided by effectively utilizing silicon semiconductor materials. The present invention relates to a method for manufacturing a photoelectric conversion device using a solar cell, in which a plurality of single crystal semiconductor substrates in each of which a damaged layer is formed at a predetermined depth is arranged over a supporting substrate having an insulating surface; a surface layer part of the single crystal semiconductor substrate is separated thinly using the damaged layer as a boundary so as to form a single crystal semiconductor layer over one surface of the supporting substrate; and the single crystal semiconductor layer is irradiated with a laser beam from a surface side which is exposed by separation of the single crystal semiconductor layer to planarize the surface of the single crystal semiconductor layer.
Public/Granted literature
- US20090117680A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE Public/Granted day:2009-05-07
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