Invention Grant
- Patent Title: Solid state imaging device and method for fabricating the same
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US12162697Application Date: 2006-12-06
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Publication No.: US07964451B2Publication Date: 2011-06-21
- Inventor: Naoto Niisoe , Kazuhisa Hirata , Tohru Yamada
- Applicant: Naoto Niisoe , Kazuhisa Hirata , Tohru Yamada
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-020299 20060130
- International Application: PCT/JP2006/324790 WO 20061206
- International Announcement: WO2007/086204 WO 20070802
- Main IPC: H01L21/339
- IPC: H01L21/339 ; H01L27/148 ; H01L21/00 ; H01L31/062
Abstract:
A first oxide film (102) is formed on a semiconductor substrate (101). A first nitride film (103) is formed on first gate electrode formation regions of the first oxide film (102). A plurality of first gate electrodes (104) are provided on the first nitride film (103) so as to be spaced apart from one another with a predetermined distance therebetween. A second oxide film (105) covers upper part and side walls of each of the first gate electrodes (104). A sidewall spacer (106) of a third oxide film is buried in an overhang portion generated on each side wall of each of the first gate electrodes (104) covered by the second oxide film (105). A second nitride film (107) covers the second oxide film (105), the sidewall spacer (106) and part of the first oxide film (102) located between the first gate electrodes (104). A plurality of second gate electrodes (108) are formed on at least part of the second nitride film (107) located between adjacent two of the first gate electrodes (104).
Public/Granted literature
- US20090194795A1 SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-08-06
Information query
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