Invention Grant
US07964456B2 Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method
有权
使用同样方法制造的多晶硅薄膜晶体管和多晶硅晶体管的制造方法
- Patent Title: Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method
- Patent Title (中): 使用同样方法制造的多晶硅薄膜晶体管和多晶硅晶体管的制造方法
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Application No.: US11033493Application Date: 2005-01-12
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Publication No.: US07964456B2Publication Date: 2011-06-21
- Inventor: Ramesh Kakkad
- Applicant: Ramesh Kakkad
- Applicant Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2004-0011146 20040219
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon film at a predetermined temperature in an H2O atmosphere. Accordingly, the crystallization temperature and thermal treatment time are decreased when the amorphous silicon is crystallized by a solid phase crystallization method, and this prevents the substrate from being bent due to application of a thermal treatment process for a long time and at a high temperature. As a result of the invention, a polysilicon thin film having superior crystallization properties is obtained. Use of the polysilicon thin film in a thin film transistor results in the reduction of defects in the thin film resistor.
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