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US07964468B2 Multi-level memory cell having phase change element and asymmetrical thermal boundary 有权
具有相变元件和不对称热边界的多层存储单元

Multi-level memory cell having phase change element and asymmetrical thermal boundary
Abstract:
A multi-level, phase change memory cell has first and second thermal isolation materials having different thermal conductivity properties situated in heat-conducting relation to first and second boundaries of the phase change material. Accordingly, when an electrical current is applied to raise the temperature of the memory material, heat is drawn away from the memory material asymmetrically along a line orthogonal to electric field lines between the electrodes.
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