Invention Grant
- Patent Title: Multi-level memory cell having phase change element and asymmetrical thermal boundary
- Patent Title (中): 具有相变元件和不对称热边界的多层存储单元
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Application No.: US12715323Application Date: 2010-03-01
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Publication No.: US07964468B2Publication Date: 2011-06-21
- Inventor: Hsiang-Lan Lung , Yi-Chou Chen
- Applicant: Hsiang-Lan Lung , Yi-Chou Chen
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffell & Wolfeld LLP
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A multi-level, phase change memory cell has first and second thermal isolation materials having different thermal conductivity properties situated in heat-conducting relation to first and second boundaries of the phase change material. Accordingly, when an electrical current is applied to raise the temperature of the memory material, heat is drawn away from the memory material asymmetrically along a line orthogonal to electric field lines between the electrodes.
Public/Granted literature
- US20100151652A1 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY Public/Granted day:2010-06-17
Information query
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