Integrated connection arrangements

Invention Grant

US07964494B2 Integrated connection arrangements 有权

Title translation: 集成连接布置

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Patent Title: Integrated connection arrangements
Patent Title (中): 集成连接布置
Application No.: US12562475

Application Date: 2009-09-18
Publication No.: US07964494B2

Publication Date: 2011-06-21
Inventor: Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck
Applicant: Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Brinks Hofer Gilson & Lione
Priority: DE10337569 20030814
Main IPC: H01L21/4763
IPC: H01L21/4763

Abstract:

A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

Abstract(Chinese):

提供一种具有至少部分或全部布置在电绝缘层的切口中的外部导电结构的连接装置。内导电结构设置在绝缘层一侧的切口的底部。内部导电结构在接触区域中邻接外部导电结构。接触区域设置在切口的另一侧的外部导电结构。接触区域和接触区域不重叠。切口的底部布置成与接触区域的至少一半重叠，以在接触区域和内部导电结构之间的主电流路径外侧的切口的边缘处的绝缘层中提供台阶。

Public/Granted literature

US20100007027A1 INTEGRATED CONNECTION ARRANGEMENTS Public/Granted day:2010-01-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）