Invention Grant
- Patent Title: Method and apparatus for photomask etching
- Patent Title (中): 光掩模蚀刻的方法和装置
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Application No.: US11554482Application Date: 2006-10-30
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Publication No.: US07964818B2Publication Date: 2011-06-21
- Inventor: Elmira Ryabova , Richard Lewington , Madhavi R. Chandrachood , Amitabh Sabharwal , Darin Bivens
- Applicant: Elmira Ryabova , Richard Lewington , Madhavi R. Chandrachood , Amitabh Sabharwal , Darin Bivens
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: B23K10/00
- IPC: B23K10/00
Abstract:
A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part in a three-stage process that includes heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate.
Public/Granted literature
- US20080101978A1 METHOD AND APPARATUS FOR PHOTOMASK ETCHING Public/Granted day:2008-05-01
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