Invention Grant
US07964866B2 Low power floating body memory cell based on low bandgap material quantum well
有权
基于低带隙材料量子阱的低功率浮体存储单元
- Patent Title: Low power floating body memory cell based on low bandgap material quantum well
- Patent Title (中): 基于低带隙材料量子阱的低功率浮体存储单元
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Application No.: US12119234Application Date: 2008-05-12
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Publication No.: US07964866B2Publication Date: 2011-06-21
- Inventor: Titash Rakshit , Gilbert Dewey , Ravi Pillarisetty
- Applicant: Titash Rakshit , Gilbert Dewey , Ravi Pillarisetty
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L49/00
- IPC: H01L49/00 ; H01L29/12 ; H01L29/778
Abstract:
Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure together with a floating body cell.
Public/Granted literature
- US20090279355A1 LOW POWER FLOATING BODY MEMORY CELL BASED ON LOW BANDGAP MATERIAL QUANTUM WELL Public/Granted day:2009-11-12
Information query
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