Invention Grant
US07964877B2 Polarized semiconductor light emitting device with light guiding portions formed within
有权
具有形成在其内的导光部分的偏振半导体发光器件
- Patent Title: Polarized semiconductor light emitting device with light guiding portions formed within
- Patent Title (中): 具有形成在其内的导光部分的偏振半导体发光器件
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Application No.: US11822186Application Date: 2007-07-03
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Publication No.: US07964877B2Publication Date: 2011-06-21
- Inventor: Sang Ho Yoon , Su Yeol Lee , Dae Yeon Kim
- Applicant: Sang Ho Yoon , Su Yeol Lee , Dae Yeon Kim
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0061789 20060703
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.
Public/Granted literature
- US20080012028A1 Polarized semiconductor light emitting device Public/Granted day:2008-01-17
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