Invention Grant
- Patent Title: Electron emission device and method of manufacturing the same
- Patent Title (中): 电子发射装置及其制造方法
-
Application No.: US11790196Application Date: 2007-04-24
-
Publication No.: US07965024B2Publication Date: 2011-06-21
- Inventor: Kwang-Seok Jeong
- Applicant: Kwang-Seok Jeong
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0037677 20060426
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
An electron emission device includes a substrate, a first electrode on the substrate, a second electrode electrically insulated from the first electrode, a first insulating layer between the first electrode and the second electrode, an electron emission source hole in the first insulating layer and the second electrode to expose the first electrode, and an electron emission source having a first electron emission material layer on the first electrode in the electron emission source hole and a second electron emission material layer on the first electron emission material layer.
Public/Granted literature
- US20070252507A1 Electron emission device and method of manufacturing the same Public/Granted day:2007-11-01
Information query