Invention Grant
- Patent Title: Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used
- Patent Title (中): 表面声波谐振器，表面声波滤波器和使用声表面波谐振器的天线双工器
-
Application No.: US12094324Application Date: 2007-12-14
-
Publication No.: US07965155B2Publication Date: 2011-06-21
- Inventor: Hiroyuki Nakamura , Hidekazu Nakanishi , Yukio Iwasaki , Ken Matsunami , Tetsuya Tsurunari
- Applicant: Hiroyuki Nakamura , Hidekazu Nakanishi , Yukio Iwasaki , Ken Matsunami , Tetsuya Tsurunari
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2006-351247 20061227
- International Application: PCT/JP2007/074084 WO 20071214
- International Announcement: WO2008/078573 WO 20080703
- Main IPC: H03H9/64
- IPC: H03H9/64 ; H03H9/72
Abstract:
The present invention provides a surface acoustic wave resonator capable of improving a leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is formed on at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, such that the SiO2 thin film is removed from upper sections of the bus-bar electrode regions of the interdigital transducer electrode.
Public/Granted literature
Information query
