Invention Grant
- Patent Title: Dual-band planar inverted-F antenna
- Patent Title (中): 双频平面倒F天线
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Application No.: US12764562Application Date: 2010-04-21
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Publication No.: US07965240B2Publication Date: 2011-06-21
- Inventor: Young-min Moon , Young-eil Kim , Gyoo-soo Chae
- Applicant: Young-min Moon , Young-eil Kim , Gyoo-soo Chae
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0010759 20050204
- Main IPC: H01Q1/38
- IPC: H01Q1/38

Abstract:
An improved and more compact structure of a built-in antenna for handheld terminals, improving radiation pattern and efficiency. Provided is a planar inverted-F antenna having a radiation part having an inductive radiation portion and a parasitic radiation portion which are spaced in a certain distance apart from a ground surface, a power-supply part horizontally spaced apart from the ground surface and for directly supplying currents to the connected inductive radiation portion, and connection parts for connecting the radiation portions to the ground. The planar inverted-F antenna has an inductive antenna portion and a parasitic antenna portion, thereby reducing its volume compared to the conventional inverted-F antenna. Complicated manufacturing and processing procedures are simplified by connecting the power-supplying part and a PCB.
Public/Granted literature
- US20100201581A1 DUAL-BAND PLANAR INVERTED-F ANTENNA Public/Granted day:2010-08-12
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