Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.