Invention Grant
- Patent Title: Memory module and memory device
- Patent Title (中): 内存模块和内存设备
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Application No.: US12435168Application Date: 2009-05-04
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Publication No.: US07965531B2Publication Date: 2011-06-21
- Inventor: Yoshinori Matsui , Toshio Sugano , Hiroaki Ikeda
- Applicant: Yoshinori Matsui , Toshio Sugano , Hiroaki Ikeda
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2003-115834 20030421
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.
Public/Granted literature
- US20090219745A1 MEMORY MODULE AND MEMORY DEVICE Public/Granted day:2009-09-03
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