A non-volatile single-event upset (SEU) tolerant latch is disclosed. The non-volatile SEU tolerant latch includes a first and second inverters connected to each other in a cross-coupled manner. The gates of transistors within the first inverter are connected to the drains of transistors within the second inverter via a first feedback resistor. Similarly, the gates of transistors within the second inverter are connected to the drains of transistors within the first inverter via a second feedback resistor. The non-volatile SEU tolerant latch also includes a pair of chalcogenide memory elements connected to the inverters for storing information.