Invention Grant
- Patent Title: Reducing temporal changes in phase change memories
- Patent Title (中): 减少相变存储器的时间变化
-
Application No.: US12080021Application Date: 2008-03-31
-
Publication No.: US07965545B2Publication Date: 2011-06-21
- Inventor: Semyon D. Savransky , Ilya V. Karpov
- Applicant: Semyon D. Savransky , Ilya V. Karpov
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory in the reset state may be heated to reduce or eliminate electrical drift.
Public/Granted literature
- US20090244964A1 Reducing temporal changes in phase change memories Public/Granted day:2009-10-01
Information query
