Invention Grant
- Patent Title: Nonvolatile semiconductor memory
- Patent Title (中): 非易失性半导体存储器
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Application No.: US12788614Application Date: 2010-05-27
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Publication No.: US07965556B2Publication Date: 2011-06-21
- Inventor: Norihiro Fujita , Hiroyuki Nagashima , Hiroshi Nakamura
- Applicant: Norihiro Fujita , Hiroyuki Nagashima , Hiroshi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-359711 20051214
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A nonvolatile semiconductor memory includes: a first semiconductor chip on which a first memory in mounted; a second semiconductor chip on which a second memory is mounted; wherein in the second memory which is a destination for copying, a read enable operation is performed after booting up a command which makes the read enable operation recognize as a write enable operation, and a data of the first memory, which is a source of the copy, is copied to the second memory.
Public/Granted literature
- US20100238727A1 NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2010-09-23
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