Invention Grant
- Patent Title: Flash memory device and set-up data initialization method
- Patent Title (中): 闪存设备和设置数据初始化方法
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Application No.: US12061849Application Date: 2008-04-03
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Publication No.: US07965557B2Publication Date: 2011-06-21
- Inventor: Sang-Gu Kang
- Applicant: Sang-Gu Kang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0037058 20070416
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A flash memory device includes a memory cell array having a set-up data region configured to store set-up data, wherein the set-up data includes first data and second data. The second data is stored in an empty cell area of the set-up data region. The flash memory also includes a page buffer and decoder configured to read the set-up data from the set-up data region, and a status detector receiving the set-up data from the page buffer and decoder and configured to discriminate the first data from the second data and generate a Pass/Fail status signal.
Public/Granted literature
- US20080253191A1 FLASH MEMORY DEVICE AND SET-UP DATA INITIALIZATION METHOD Public/Granted day:2008-10-16
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