Invention Grant
- Patent Title: Laser diode and method of manufacturing the same
- Patent Title (中): 激光二极管及其制造方法
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Application No.: US12237547Application Date: 2008-09-25
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Publication No.: US07965749B2Publication Date: 2011-06-21
- Inventor: Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
- Applicant: Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2007-259429 20071003
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.
Public/Granted literature
- US20090092163A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-04-09
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