Invention Grant
US07968441B2 Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
失效
掺杂剂激活退火以获得更少的掺杂剂扩散（更好的USJ曲线）和更高的激活百分比
- Patent Title: Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
- Patent Title (中): 掺杂剂激活退火以获得更少的掺杂剂扩散（更好的USJ曲线）和更高的激活百分比
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Application No.: US12247448Application Date: 2008-10-08
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Publication No.: US07968441B2Publication Date: 2011-06-28
- Inventor: Zhi Xu
- Applicant: Zhi Xu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A method and apparatus for forming a semiconductor device. A semiconductor substrate is implanted with dopants. The substrate is subjected to a cleaning process employing electrically neutral nitrogen and fluorine radicals to produce an oxygen-free surface having dangling bonds. Before any further exposure to oxidizing gases, the substrate is annealed by thermal treatment to activate and distribute the dopants. A gate oxide layer is formed over the annealed surface. The apparatus performs all such treatments without breaking vacuum.
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