Invention Grant
- Patent Title: Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
- Patent Title (中): 量子点敏化宽带隙半导体光电器件及其制造方法
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Application No.: US11713652Application Date: 2007-03-05
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Publication No.: US07968792B2Publication Date: 2011-06-28
- Inventor: Samuel D. Harkness, IV , Hans J. Richter
- Applicant: Samuel D. Harkness, IV , Hans J. Richter
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L31/0352
Abstract:
A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
Public/Granted literature
- US20080216891A1 Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same Public/Granted day:2008-09-11
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