Invention Grant
- Patent Title: Boron aluminum nitride diamond heterostructure
- Patent Title (中): 硼氮化铝金刚石异质结构
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Application No.: US12497994Application Date: 2009-07-06
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Publication No.: US07968865B2Publication Date: 2011-06-28
- Inventor: Jeffrey R. LaRoche , William E. Hoke , Steven D. Bernstein , Ralph Korenstein
- Applicant: Jeffrey R. LaRoche , William E. Hoke , Steven D. Bernstein , Ralph Korenstein
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.
Public/Granted literature
- US20100090228A1 BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE Public/Granted day:2010-04-15
Information query
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