Invention Grant
US07968886B2 Semiconductor integrated circuit and method of fabricating same 失效
半导体集成电路及其制造方法

Semiconductor integrated circuit and method of fabricating same
Abstract:
A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are formed out of an insulator over side surfaces of the gate electrodes and of the gate wiring. The presence of these substantially triangular side walls make milder the steps at which the second wiring goes over the gate wiring. This suppresses breakage of the second wiring.
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