Invention Grant
- Patent Title: Bidirectional electrostatic discharge protection structure for high voltage applications
- Patent Title (中): 双向静电放电保护结构，适用于高压应用
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Application No.: US12563610Application Date: 2009-09-21
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Publication No.: US07968908B2Publication Date: 2011-06-28
- Inventor: Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
- Applicant: Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Anthony J. Canale
- Main IPC: H01L29/73
- IPC: H01L29/73
Abstract:
Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and a first-conductivity-type doped region are formed above each second-conductivity-type well such that a portion of the second-conductivity-type well resistively separates the second-conductivity-type doped region and the first-conductivity-type doped region within the semiconductor substrate. Each of the second-conductivity-type doped regions is wired either to a signal node or electrical ground. One of the two npn transistors and one of the two p-n diodes, each inherently present in the semiconductor structure, turn on to provide protection against electrical discharge events involving either type of excessive electrical charges.
Public/Granted literature
- US20110068364A1 BIDIRECTIONAL ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS Public/Granted day:2011-03-24
Information query
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