Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US12213711Application Date: 2008-06-24
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Publication No.: US07968958B2Publication Date: 2011-06-28
- Inventor: Tetsuo Fujii , Kazuhiko Sugiura
- Applicant: Tetsuo Fujii , Kazuhiko Sugiura
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2007-174028 20070702; JP2008-004144 20080111
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
Public/Granted literature
- US20090008728A1 Semiconductor device and manufacturing method of the same Public/Granted day:2009-01-08
Information query
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