Invention Grant
US07968967B2 One-time-programmable anti-fuse formed using damascene process 有权
使用镶嵌工艺形成一次性可编程反熔丝

One-time-programmable anti-fuse formed using damascene process
Abstract:
A semiconductor structure includes a semiconductor substrate, a power source, and a stacked structure over the semiconductor substrate and coupled to the power source. The stacked structure includes a bottom electrode, a top electrode, and an insulation layer between the top electrode and the bottom electrode, wherein the insulation layer has a breakdown voltage lower than a pre-determined write voltage provided by the power source and higher than a pre-determined read voltage provided by the power source.
Public/Granted literature
Information query
Patent Agency Ranking
0/0