Invention Grant
- Patent Title: One-time-programmable anti-fuse formed using damascene process
- Patent Title (中): 使用镶嵌工艺形成一次性可编程反熔丝
-
Application No.: US11487849Application Date: 2006-07-17
-
Publication No.: US07968967B2Publication Date: 2011-06-28
- Inventor: Ming-Tsong Wang , Tong-Chern Ong
- Applicant: Ming-Tsong Wang , Tong-Chern Ong
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
A semiconductor structure includes a semiconductor substrate, a power source, and a stacked structure over the semiconductor substrate and coupled to the power source. The stacked structure includes a bottom electrode, a top electrode, and an insulation layer between the top electrode and the bottom electrode, wherein the insulation layer has a breakdown voltage lower than a pre-determined write voltage provided by the power source and higher than a pre-determined read voltage provided by the power source.
Public/Granted literature
- US20080012138A1 One-time-programmable anti-fuse formed using damascene process Public/Granted day:2008-01-17
Information query
IPC分类: