Invention Grant
- Patent Title: Semiconductor device encapsulated with resin composition
- Patent Title (中): 用树脂组合物封装的半导体器件
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Application No.: US11806184Application Date: 2007-05-30
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Publication No.: US07969027B2Publication Date: 2011-06-28
- Inventor: Shoichi Osada
- Applicant: Shoichi Osada
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-152568 20060531
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/28 ; H01L23/31 ; B32B27/04 ; B32B27/20 ; B32B27/38 ; C08K3/34 ; C08K3/36 ; C08L63/00

Abstract:
A semiconductor device comprising an organic substrate, at least one semiconductor chip provided on a surface of the substrate, and a cured resin composition encapsulating the semiconductor chip provided on the surface of the substrate, characterized in that an absolute value of a distance between an imaginary line connecting two diagonally opposite corners of the substrate and a highest or lowest position on the surface of the substrate between the corners is smaller than 600 μm, as measured with a laser three-dimensional measuring instrument, a total volume ratio of the semiconductor chip to the semiconductor device ranges from 18 to 50%, and the cured resin composition comprises an inorganic filler (C) in such an amount that a weight ratio of the inorganic filler (C) to a total weight of the cured resin composition ranges from 80 to 90%.
Public/Granted literature
- US20070281164A1 Semiconductor device encapsulated with resin composition Public/Granted day:2007-12-06
Information query
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