Invention Grant
US07969239B2 Charge pump circuit and a novel capacitor for a memory integrated circuit
有权
电荷泵电路和用于存储器集成电路的新型电容器
- Patent Title: Charge pump circuit and a novel capacitor for a memory integrated circuit
- Patent Title (中): 电荷泵电路和用于存储器集成电路的新型电容器
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Application No.: US12569832Application Date: 2009-09-29
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Publication No.: US07969239B2Publication Date: 2011-06-28
- Inventor: Hieu Van Tran , Hung Q. Nguyen , Thuan T. Vu , Anh Ly
- Applicant: Hieu Van Tran , Hung Q. Nguyen , Thuan T. Vu , Anh Ly
- Applicant Address: US CA Sunnyvale
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: DLA Piper LLP (US)
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
A novel capacitor for use in a charge pump circuit has a substrate with a planar surface. A first electrode is in a first plane spaced apart from the planar surface. A second electrode is adjacent to and is spaced apart from the first electrode in the first plane and is capacitively coupled thereto. A third electrode is in a second plane, spaced apart from the first plane and is capacitively coupled to the first electrode. A fourth electrode is adjacent to and spaced apart from the third electrode in the second plane and is capacitively coupled to the third electrode and capacitively coupled to the second electrode. The first and fourth electrodes are electrically connected together and the second and third electrodes are electrically connected together. In addition, a cylindrical shape electrode, and a great wall electrode, and charge pump capacitor-by-pattern-filling is disclosed. A charge pump circuit using the foregoing described capacitor has a plurality of transistors for charging the capacitor and discharging the capacitor thereby increasing the voltage of the charge pump circuit.
Public/Granted literature
- US20110074492A1 Charge Pump Circuit And A Novel Capacitor For A Memory Integrated Circuit Public/Granted day:2011-03-31
Information query
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