Invention Grant
- Patent Title: Device having thin black mask and method of fabricating the same
- Patent Title (中): 具有薄黑色掩模的装置及其制造方法
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Application No.: US12101073Application Date: 2008-04-10
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Publication No.: US07969638B2Publication Date: 2011-06-28
- Inventor: Gang Xu , Chun-Ming Wang , Fan Zhong , Qi Luo
- Applicant: Gang Xu , Chun-Ming Wang , Fan Zhong , Qi Luo
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G02F1/03
- IPC: G02F1/03 ; G02B27/00
Abstract:
A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.
Public/Granted literature
- US20090257105A1 DEVICE HAVING THIN BLACK MASK AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-10-15
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