Invention Grant
- Patent Title: Device having power generating black mask and method of fabricating the same
- Patent Title (中): 具有发电黑色掩模的装置及其制造方法
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Application No.: US12371538Application Date: 2009-02-13
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Publication No.: US07969641B2Publication Date: 2011-06-28
- Inventor: Ion Bita , Chun-Ming Wang , Gang Xu
- Applicant: Ion Bita , Chun-Ming Wang , Gang Xu
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear
- Main IPC: G02B7/02
- IPC: G02B7/02
Abstract:
A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.
Public/Granted literature
- US20090207473A1 DEVICE HAVING POWER GENERATING BLACK MASK AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-08-20
Information query
IPC分类:
| G | 物理 |
| G02 | 光学 |
| G02B | 光学元件、系统或仪器 |
| G02B7/00 | 光学元件的安装、调整装置或不漏光连接 |
| G02B7/02 | .用于透镜 |
