Invention Grant
US07969693B2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
有权
隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
- Patent Title: Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
- Patent Title (中): 隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
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Application No.: US11857921Application Date: 2007-09-19
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Publication No.: US07969693B2Publication Date: 2011-06-28
- Inventor: Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
- Applicant: Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
- Applicant Address: JP Tokyo
- Assignee: Alps Electric Co., Ltd.
- Current Assignee: Alps Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2006-255646 20060921; JP2007-065628 20070314
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
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