Invention Grant
- Patent Title: Spin transfer torque—magnetic tunnel junction device and method of operation
- Patent Title (中): 旋转传递扭矩磁隧道结装置及其操作方法
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Application No.: US12474608Application Date: 2009-05-29
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Publication No.: US07969767B2Publication Date: 2011-06-28
- Inventor: Xia Li , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- Applicant: Xia Li , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Semion Talpalatsky
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C11/15
Abstract:
A method is disclosed that includes controlling current flow direction for current sent over a source line or a bit line of a magnetic memory device. A current generated magnetic field assists switching of a direction of a magnetic field of a free layer of a magnetic element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.
Public/Granted literature
- US20100302843A1 Spin Transfer Torque - Magnetic Tunnel Junction Device and Method of Operation Public/Granted day:2010-12-02
Information query
