Invention Grant
- Patent Title: Method for testing a memory device
- Patent Title (中): 用于测试存储器件的方法
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Application No.: US12504808Application Date: 2009-07-17
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Publication No.: US07971114B2Publication Date: 2011-06-28
- Inventor: Mo-Ying Tong , Xue-Wen Hong , Chiang-Chung Tang
- Applicant: Mo-Ying Tong , Xue-Wen Hong , Chiang-Chung Tang
- Applicant Address: CN Shenzhen, Guangdong Province TW Tu-Cheng, New Taipei
- Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong Province TW Tu-Cheng, New Taipei
- Agent Raymond J. Chew
- Priority: CN200910300486 20090219
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A method for testing a random-access memory (RAM) includes six tests. The first test is performed by performing a write and read test to storage locations of the RAM. The second test is performed by testing walking 1's across each data bus of the RAM. The third test is performed by testing walking 0's across the data bus of the RAM. The fourth test is performed by testing walking 1's across each address bus of the RAM. The fifth test is performed by testing walking 0's across the address bus bit of the RAM. The sixth test is performed by performing a write and read test to random blocks in the storage locations of the RAM.
Public/Granted literature
- US20100211835A1 METHOD FOR TESTING A MEMORY DEVICE Public/Granted day:2010-08-19
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