Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12400474Application Date: 2009-03-09
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Publication No.: US07971351B2Publication Date: 2011-07-05
- Inventor: Yoshimi Takahashi , Masazumi Amagai
- Applicant: Yoshimi Takahashi , Masazumi Amagai
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: JP2005-187137 20050627; JP2005-187175 20050627
- Main IPC: H05K3/30
- IPC: H05K3/30

Abstract:
The objective of the invention is to provide a method of manufacturing a semiconductor device that allows individual molding of plural semiconductor chips carried on a surface of the substrate. It includes the following process steps: a process step in which plural semiconductor elements 102 are arranged on the surface of substrate 100; a process step in which the inner side of substrate 102 is fixed on lower die 130; a process step in which liquid resin 114 is supplied from nozzle 112 onto each of the semiconductor elements in order to cover at least a portion of each of semiconductor chips 102; a process step in which the upper die having plural cavities 144 formed in one surface is pressed onto the lower die, and liquid resin 114 is molded at a prescribed temperature by means of plural cavities 144; and a process step in which cavities 144 of upper die 140 are detached from the substrate, and plural molding resin portions are formed individually.
Public/Granted literature
- US20090176336A1 Method of Manufacturing a Semiconductor Device Public/Granted day:2009-07-09
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