Inductively coupled dual zone processing chamber with single planar antenna

Invention Grant

US07972471B2 Inductively coupled dual zone processing chamber with single planar antenna 有权

Title translation: 具有单平面天线的感应耦合双区处理室

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Patent Title: Inductively coupled dual zone processing chamber with single planar antenna
Patent Title (中): 具有单平面天线的感应耦合双区处理室
Application No.: US11819898

Application Date: 2007-06-29
Publication No.: US07972471B2

Publication Date: 2011-07-05
Inventor: Sanket P. Sant
Applicant: Sanket P. Sant
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Buchanan Ingersoll & Rooney PC
Main IPC: H01L21/306
IPC: H01L21/306 ; C23C16/00

Inductively coupled dual zone processing chamber with single planar antenna

Abstract:

A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support surface adapted to support a second substrate within the processing chamber. One or more gas sources in fluid communication with one or more gas distribution members supply process gas to a first zone adjacent to the first substrate support and a second zone adjacent to the second substrate support. A radio-frequency (RF) antenna adapted to inductively couple RF energy into the interior of the processing chamber and energize the process gas into a plasma state in the first and second zones. The antenna is located between the first substrate support and the second substrate support.

Abstract(Chinese):

提供双区等离子体处理室。等离子体处理室包括第一基板支撑件，其具有适于支撑处理室内的第一基板的第一支撑表面和具有适于支撑处理室内的第二基板的第二支撑表面的第二基板支撑。与一个或多个气体分配构件流体连通的一个或多个气体源将工艺气体供应到与第一衬底支撑件相邻的第一区域和邻近第二衬底支撑件的第二区域。一种射频（RF）天线，其适于将RF能量感应地耦合到处理室的内部，并且使处理气体在第一和第二区域中激发成等离子体状态。天线位于第一基板支撑件和第二基板支撑件之间。

Public/Granted literature

US20090004874A1 Inductively coupled dual zone processing chamber with single planar antenna Public/Granted day:2009-01-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）