Invention Grant
- Patent Title: Method of making ternary piezoelectric crystals
- Patent Title (中): 制造三元压电晶体的方法
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Application No.: US12023646Application Date: 2008-01-31
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Publication No.: US07972527B2Publication Date: 2011-07-05
- Inventor: Jun Luo , Wesley S. Hackenberger
- Applicant: Jun Luo , Wesley S. Hackenberger
- Applicant Address: US PA State College
- Assignee: TRS Technologies, Inc.
- Current Assignee: TRS Technologies, Inc.
- Current Assignee Address: US PA State College
- Agency: McNees Wallace & Nurick LLC
- Main IPC: H01L47/187
- IPC: H01L47/187 ; C04B35/499

Abstract:
A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.
Public/Granted literature
- US20090194732A1 METHOD OF MAKING TERNARY PIEZOELECTRIC CRYSTALS Public/Granted day:2009-08-06
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