Invention Grant
- Patent Title: Method and apparatus for forming a high quality low temperature silicon nitride layer
- Patent Title (中): 用于形成高质量低温氮化硅层的方法和装置
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Application No.: US10741417Application Date: 2003-12-19
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Publication No.: US07972663B2Publication Date: 2011-07-05
- Inventor: Shulin Wang , Errol Antonio C. Sanchez , Aihua (Steven) Chen
- Applicant: Shulin Wang , Errol Antonio C. Sanchez , Aihua (Steven) Chen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H05H1/24
- IPC: H05H1/24 ; H05H1/00 ; B05D3/00 ; C04B41/00 ; C08J7/18 ; C23C16/00
Abstract:
A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
Public/Granted literature
- US20040194706A1 Method and apparatus for forming a high quality low temperature silicon nitride layer Public/Granted day:2004-10-07
Information query
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