The present invention relates to a porous silicon material comprising one or more pore parts which include a first pore, a second pore, and a third pore. The first pore is formed in an upper side of the silicon. The second pore is formed in a lower side of the first pore and has a diameter that is larger or smaller than a diameter of the first pore. The third pore is formed in a lower side of the second pore and has a diameter that is identical or similar to the diameter of the first pore. The pore part having a double structure is formed in a silicon material. Since different electronic materials can be implanted into different pores of the porous silicon, it is easy to form interfaces of the implanted electronic materials.