Invention Grant
- Patent Title: Triple-layer semiconductor nanoparticle and triple-layer semiconductor nanorod
- Patent Title (中): 三层半导体纳米颗粒和三层半导体纳米棒
-
Application No.: US12162164Application Date: 2006-11-27
-
Publication No.: US07972694B2Publication Date: 2011-07-05
- Inventor: Mitsuru Sekiguchi , Kazuya Tsukada , Hisatake Okada
- Applicant: Mitsuru Sekiguchi , Kazuya Tsukada , Hisatake Okada
- Applicant Address: JP
- Assignee: Konica Minolta Medical & Graphic, Inc.
- Current Assignee: Konica Minolta Medical & Graphic, Inc.
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2006-021390 20060130
- International Application: PCT/JP2006/323559 WO 20061127
- International Announcement: WO2007/086188 WO 20070802
- Main IPC: B32B5/16
- IPC: B32B5/16

Abstract:
A semiconductor nanoparticle and semiconductor nanorod that have optical characteristics (luminescence intensity and emission lifetime) superior to those of conventional core/shell nanosized semiconductors. There are provided a triple-layer semiconductor nanoparticle, and triple-layer semiconductor nanorod, having an average particle diameter of 2 to 50 nm and comprising a core layer, an interlayer and a shell layer, wherein the layers are composed of different crystals, and wherein the crystal constructing the shell layer exhibits a band gap greater than that of the crystal constructing the core layer, and wherein the crystal constructing the interlayer has a lattice constant assuming a value between those of the crystal constructing the core layer and the crystal constructing the shell layer.
Public/Granted literature
- US20090053522A1 TRIPLE-LAYER SEMICONDUCTOR NANOPARTICLE AND TRIPLE-LAYER SEMICONDUCTOR NANOROD Public/Granted day:2009-02-26
Information query