Invention Grant
US07972753B2 Masks for microlithography and methods of making and using such masks
有权
用于微光刻的掩模以及制造和使用这种掩模的方法
- Patent Title: Masks for microlithography and methods of making and using such masks
- Patent Title (中): 用于微光刻的掩模以及制造和使用这种掩模的方法
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Application No.: US12917249Application Date: 2010-11-01
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Publication No.: US07972753B2Publication Date: 2011-07-05
- Inventor: Byron N. Burgess , William A. Stanton , Zhong Shi
- Applicant: Byron N. Burgess , William A. Stanton , Zhong Shi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.
Public/Granted literature
- US20110045388A1 MASKS FOR MICROLITHOGRAPHY AND METHODS OF MAKING AND USING SUCH MASKS Public/Granted day:2011-02-24
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