Invention Grant
- Patent Title: Pattern forming method and a semiconductor device manufacturing method
- Patent Title (中): 图案形成方法和半导体器件制造方法
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Application No.: US12457108Application Date: 2009-06-01
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Publication No.: US07972765B2Publication Date: 2011-07-05
- Inventor: Kenji Kawano , Tsuyoshi Shibata , Kei Hayasaki
- Applicant: Kenji Kawano , Tsuyoshi Shibata , Kei Hayasaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-322495 20041105
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.
Public/Granted literature
- US20090246710A1 Pattern forming method and a semiconductor device manufacturing method Public/Granted day:2009-10-01
Information query
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