Invention Grant
- Patent Title: Method for forming fine pattern of semiconductor device
- Patent Title (中): 用于形成半导体器件精细图案的方法
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Application No.: US11962405Application Date: 2007-12-21
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Publication No.: US07972766B2Publication Date: 2011-07-05
- Inventor: Cheol Kyu Bok
- Applicant: Cheol Kyu Bok
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0065078 20070629
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method for forming a fine pattern of a semiconductor device comprises: forming anti-reflection coating patterns over an underlying layer of a semiconductor substrate using an anti-reflection coating composition comprising a silicon-containing polymer; forming a photoresist pattern between the anti-reflection coating patterns using a photoresist composition comprising a silicon-containing polymer; and patterning the underlying layer using the photoresist patterns as an etching mask.
Public/Granted literature
- US20090004603A1 Method for Forming Fine Pattern of Semiconductor Device Public/Granted day:2009-01-01
Information query
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