A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for a tunneling current through the quantum dot memory cell as a function of a voltage applied to the quantum dot memory cell and selecting parameters of the quantum dot memory cell such that the tunneling current through the quantum dot memory cell exhibits a bistable current for at least some values of the voltage applied to the quantum dot memory cell. The values for the tunneling current are determined on the basis of a density of states of the array of quantum dots.