Invention Grant
US07972891B2 Image sensor and method for manufacturing the same 有权
图像传感器及其制造方法

Image sensor and method for manufacturing the same
Abstract:
An image sensor and a method for manufacturing the same that includes photodiodes formed in a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, the first insulating layer including a seed pattern corresponding spatially to the positions of the photodiodes, lower microlenses composed of an organic material formed over the seed pattern, a second insulating layer formed over the lower microlenses, a third insulating layer formed over the second insulating layer, color filters formed over the third insulating layer, and upper micro lenses formed over the color filters.
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