Invention Grant
- Patent Title: Memory device manufacturing method
- Patent Title (中): 存储器件制造方法
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Application No.: US12469184Application Date: 2009-05-20
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Publication No.: US07972893B2Publication Date: 2011-07-05
- Inventor: Erh-Kun Lai , ChiaHua Ho , Kuang-Yeu Hsieh
- Applicant: Erh-Kun Lai , ChiaHua Ho , Kuang-Yeu Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent James F. Hann
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for making a memory device includes providing a dielectric material, having first and second upwardly and inwardly tapering surfaces and a surface segment connecting the first and second surfaces. First and second electrodes are formed over the first and second surfaces. A memory element is formed over the surface segment to electrically connect the first and second electrodes.
Public/Granted literature
- US20090239358A1 Memory Device Manufacturing Method Public/Granted day:2009-09-24
Information query
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