Invention Grant
- Patent Title: Multi-bit memory cell structure and method of manufacturing the same
- Patent Title (中): 多位存储单元结构及其制造方法
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Application No.: US12330640Application Date: 2008-12-09
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Publication No.: US07972896B2Publication Date: 2011-07-05
- Inventor: Kwang-Jeon Kim
- Applicant: Kwang-Jeon Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0128536 20071211
- Main IPC: H01L21/06
- IPC: H01L21/06

Abstract:
A method of manufacturing a semiconductor memory cell including phase change material. A multi-bit memory cell may implement phase change material. Various kinds of information can be stored in one memory cell. A chip size may be minimized without sacrificing capacity and/or memory performance, as compared with a one-bit memory cell.
Public/Granted literature
- US20090146129A1 MULTI-BIT MEMORY CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-06-11
Information query
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