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US07972896B2 Multi-bit memory cell structure and method of manufacturing the same 有权
多位存储单元结构及其制造方法

Multi-bit memory cell structure and method of manufacturing the same
Abstract:
A method of manufacturing a semiconductor memory cell including phase change material. A multi-bit memory cell may implement phase change material. Various kinds of information can be stored in one memory cell. A chip size may be minimized without sacrificing capacity and/or memory performance, as compared with a one-bit memory cell.
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