Invention Grant
- Patent Title: Method for fabricating copper-containing ternary and quaternary chalcogenide thin films
- Patent Title (中): 含铜三元和四元硫族化物薄膜的制造方法
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Application No.: US12462146Application Date: 2009-07-30
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Publication No.: US07972899B2Publication Date: 2011-07-05
- Inventor: Isaiah O. Oladeji
- Applicant: Isaiah O. Oladeji
- Applicant Address: US FL Orlando
- Assignee: Sisom Thin Films LLC
- Current Assignee: Sisom Thin Films LLC
- Current Assignee Address: US FL Orlando
- Agent Robert J Lauf
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16 ; H01L21/06

Abstract:
An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.
Public/Granted literature
- US20110027940A1 Method for fabricating copper-containing ternary and quaternary chalcogenide thin films Public/Granted day:2011-02-03
Information query
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