Invention Grant
- Patent Title: Method of switching off a monolithically integrated optically controlled thyristor
- Patent Title (中): 关闭单片集成光控晶闸管的方法
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Application No.: US12889580Application Date: 2010-09-24
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Publication No.: US07972908B2Publication Date: 2011-07-05
- Inventor: Yeuan-Ming Sheu
- Applicant: Yeuan-Ming Sheu
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Bingham McCutchen LLP
- Agent Robert C. Bertin; Daniel J. Long
- Main IPC: H01L21/332
- IPC: H01L21/332

Abstract:
A method of switching-off a monolithically integrated light-activated thyristor structure in an n-p-n-p-n-p sequence is herein presented. In the method a monolithically integrated semiconductor thyristor structure is illuminated through an optical aperture to convey light into the embedded switching semiconductor structure to electrically short a thyristor cathode and a thyristor base through a floating gate to turn off the thyristor.
Public/Granted literature
- US20110025135A1 MONOLITHICALLY INTEGRATED LIGHT-ACTIVED THYRISTOR AND METHOD Public/Granted day:2011-02-03
Information query
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