Vertical PNP transistor and method of making same

Invention Grant

US07972919B2 Vertical PNP transistor and method of making same 有权

Title translation: 垂直PNP晶体管及其制作方法

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Patent Title: Vertical PNP transistor and method of making same
Patent Title (中): 垂直PNP晶体管及其制作方法
Application No.: US11160956

Application Date: 2005-07-18
Publication No.: US07972919B2

Publication Date: 2011-07-05
Inventor: Peter B. Gray , Benjamin T. Voegeli
Applicant: Peter B. Gray , Benjamin T. Voegeli
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Scully, Scott, Murphy & Presser, P.C.
Agent Richard M. Kotulak, Esq.
Main IPC: H01L21/8234
IPC: H01L21/8234

Vertical PNP transistor and method of making same

Abstract:

The present invention relates to a device structure located in a semiconductor substrate and containing high performance vertical NPN and PNP transistors. Specifically, the vertical PNP transistor has an emitter region, and the vertical NPN transistor has an intrinsic base region. The emitter region of the vertical PNP transistor and the intrinsic base region of the vertical NPN transistor are located in a single silicon germanium-containing layer, and they both contain single crystal silicon germanium. The present invention also relates to a method for fabricating such a device structure based on collateral modification of conventional fabrication processes for CMOS and bipolar devices, with few or no additional processing steps.

Abstract(Chinese):

本发明涉及一种位于半导体衬底中并包含高性能垂直NPN和PNP晶体管的器件结构。具体地，垂直PNP晶体管具有发射极区域，垂直NPN晶体管具有本征基极区域。垂直PNP晶体管的发射极区域和垂直NPN晶体管的本征基极区域位于单个含硅锗层中，并且它们都包含单晶硅锗。本发明还涉及一种用于制造这种基于用于CMOS和双极器件的传统制造工艺的侧面修改的器件结构的方法，其中很少或没有附加的处理步骤。

Public/Granted literature

US20070013031A1 VERTICAL PNP TRANSISTOR AND METHOD OF MAKING SAME Public/Granted day:2007-01-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺